Piezoelectric tantalum pentoxide studied for optical tunable applications
نویسندگان
چکیده
منابع مشابه
Mocvd of Tantalum Pentoxide for Large-area Ulsi Circuit Wafers
Ta2O5 films of 10-150 nm thickness were prepared by oxygen-assisted pyrolytic LPCVD at 450-490°C from tantalum penta ethoxide and 0 2 with N2 diluent. Silicon wafers 150 mm in diameter were used as substrates with a novel LPCVD reactor. The films were annealed in dry 0 2 a t 700-800°C. Compositional, structural, and electrical evaluations demonstrate that these uniform, pure, and conformal Ta2O...
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ژورنال
عنوان ژورنال: Applied Optics
سال: 2002
ISSN: 0003-6935,1539-4522
DOI: 10.1364/ao.41.003270